Hongyu Yu, currently serves as Professor and Dean of School of Microelectronics, SUSTech. His main research areas include CMOS, Novel Ultra-High Density Memory, GaN Device and System Integration, and Electronic Ceramics. Prof. Yu has published ~400 papers, with ~5000 citation record and 41 h-index. He has also contributed to chapters of 4 books and edited 2 books. He holds 23 US/UN patents and 76 national patents. He is the founder of School of Microelectronics, SUSTech (national exemplary school of microelectronics), and Future Communication IC Engineering Research Center, Ministry of Education, and Guangdong GaN Device Engineering Technology Center, and Guangdong 3D IC Engineering Research Center, and Shenzhen Third-Generation Semiconductor Key Laboratory.
2004 Ph.D. Department of Electrical and Computer Engineering, National University of Singapore
2001 M.S. Department of Materials Science and Engineering, University of Toronto
1999 B.A. Department of Materials Science and Engineering, Tsinghua University
2019.06-Present, Dean of School of Microelectronics, SUSTech
2011.10-Present, Professor, SUSTech
2008.01-2011.10, “Nanyang” Assistant Professor and Vice Director of Nano Device Lab, School of EEE, NTU
2004.05-2008.01, Senior Researcher/Technical Project Leader, IMEC, Belgium
2018.01-2022.12, Associate Editor, Science Bulletin
2018-Present, Editorial Board Member of “Encyclopaedia of IC Industry” by Yangyuan Wang
2011.04-2014.04, Part-time Professor, Tianjin University/Tianjin University of Technology
GaN power devices and system integration (GaN HEMT)
CMOS devices and processes
Novel ultra-high density memories
Awards & Honors
Leading Scientific & Technical Innovation Talents of Guangdong Special Support Program (2019)
Outstanding Scientific Research Award in South University of Science and Technology (2016)
Pengcheng Scholar, Shenzhen (2014)
Shenzhen Peacock Project for Overseas High-Caliber Personnel (2013)
Shenzhen Government Special Allowance (2012)
IET Fellow (2012)
TCT Academic Exchange Award (2009)
Nanyang Assistant Professorship, NTU (2008)
Highlight Paper in Symposium on VLSI Technology (2007, Kyoto, Japan)
IEEE Electron Device Society (EDS) Graduate Fellowship (2004, USA)
（1）M.-Y. Fan, Y. Jiang, G. -Y. Yang, Y. -L. Jiang and H. -Y. Yu, "Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN," in IEEE Electron Device Letters, vol. 41, no. 10, pp. 1484-1487, Oct. 2020, doi: 10.1109/LED.2020.3020232.
（2）G. X. Wan et al., "Overshoot stress on ultra-thin HfO2 high-k layer and its impact on lifetime extraction," in IEEE Electron Device Letters, vol. 36, no. 12, pp. 1267–1270, Dec. 2015, doi: 10.1109/LED.2015.2490719.
(3) X. A. Tran, W. Zhu, W. J. Liu, Y. C. Yeo, B. Y. Nguyen and H. Y. Yu, "A self-rectifying AlOy bipolar RRAM with sub-50-uA set/reset current for cross-bar architecture," in IEEE Electron Device Letters, vol. 33, no. 10, pp. 1402-1404, Oct. 2012, doi: 10.1109/LED.2012.2210855.
(4)W. J. Liu et al., "Positive Bias-Induced Vth Instability in Graphene Field Effect Transistors," in IEEE Electron Device Letters, vol. 33, no. 3, pp. 339-341, March 2012, doi: 10.1109/LED.2011.2181150.
(5)G. Zhou et al., "Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements," in IEEE Transactions on Electron Devices, vol. 68, no. 4, pp. 1518-1523, April 2021, doi: 10.1109/TED.2021.3057007.
(6)L. Wang, G. Xia and H. Yu, "A Method to Determine Dielectric Model Parameters for Broadband Permittivity Characterization of Thin Film Substrates," in IEEE Transactions on Electromagnetic Compatibility, vol. 63, no. 1, pp. 229-236, Feb. 2021, doi: 10.1109/TEMC.2020.2989227.
(7)Y. Qi et al., "Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT," in IEEE Transactions on Electron Devices, vol. 65, no. 5, pp. 1759-1764, May 2018, doi: 10.1109/TED.2018.2813985.
(8)He, J., Cheng, W.-C., Wang, Q., Cheng, K., Yu, H., Chai, Y., Recent Advances in GaN-Based Power HEMT Devices. Adv. Electron. Mater. 2021, 7, 2001045. https://doi.org/10.1002/aelm.202001045
(9)Luo, D., Li, X., Dumont, A., Yu, H., Lu, Z.-H., Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices. Adv. Mater. 2021, 33, 2006004. https://doi.org/10.1002/adma.202006004.
(10)J. Zhang et al., “Impact of high temperature H2 pre-treatment on pt-AlGaN/GaN HEMT sensor for H2S detection,” Sens. Actuators B, Chem., vol. 280, pp. 138–143, Feb. 2019, doi: 10.1016/j.snb.2018.10.052.
(11)Sokolovskij R, Zhang J, Iervolino E, Zhao C, Santagata F, Wang F, Yu H, Sarro PM, Zhang GQ. Hydrogen sulfide detection properties of pt-gated AlGaN/GaN HEMT-sensor. Sens. Actuators B Chem. 2018;274:636-644. https://doi.org/10.1016/j.snb.2018.08.015
(12)F. Zeng, J.X. An, G. Zhou, W. Li, H. Wang, T. Duan, L. Jiang, H. Yu, A comprehensive review of recent progress on GaN high electron mobility transistors: devices, fabrication and reliability, Electronics 7 (2018) 377, https://doi.org/10.3390/ electronics7120377
(1) H.Y. Yu. Hafnium: Chemical Characteristics, Production and Applications, Nova Science Publishers, 2014.
(2) H.Y. Yu*. Electrical properties of ultrathin hafnium-based high-K dielectrics and their applications insub-22 nm CMOS devices, Nova Science Publishers, 2014.
(3) J.S. Li, H.Y. Yu*. Enhancement of Si-based solar cell efficiency via nanostructure integration, Springer, 2011.
(4) H.Y. Yu*. Metal Gate Electrode and High-K Dielectrics for Sub-32 nm Bulk CMOS Technology: Integrating Lanthanum Oxide Capping Layer for Low Threshold-Voltage Devices Application, IN-TECH, 2010.